High-temperature electronic devices enabled by hBN-encapsulated graphene
Makars Šiškins (The University of Manchester, Kavli institute of nanoscience Delft, TU Delft - Applied Sciences)
Ciaran Mullan (The University of Manchester)
Seok Kyun Son (The University of Manchester, Mokpo National University, Muan)
Jun Yin (The University of Manchester)
Kenji Watanabe (National Institute for Materials Science)
Takashi Taniguchi (National Institute for Materials Science)
Davit Ghazaryan (National Research University Higher School of Economics (HSE University), The University of Manchester)
Kostya S. Novoselov (The University of Manchester)
Artem Mishchenko (The University of Manchester)
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Abstract
Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).