High-temperature electronic devices enabled by hBN-encapsulated graphene

Journal article (2019)

Authors

M. Siskins The University of Manchester, Kavli institute of nanoscience Delft, QN/Steeneken Lab - AS
Ciaran Mullan The University of Manchester
Seok Kyun Son Mokpo National University, Muan, The University of Manchester
Jun Yin The University of Manchester
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi National Institute for Materials Science
Davit Ghazaryan National Research University Higher School of Economics, The University of Manchester
Kostya S. Novoselov The University of Manchester
Artem Mishchenko The University of Manchester
Research Group
QN/Steeneken Lab (AS) (TU Delft)
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Published Date

2019

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Steeneken Lab

Abstract

Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).

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