Characterization of internal quality factors in surface-treated and deep-etched superconducting CPW resonators
K.L. van der Enden (TU Delft - Applied Sciences)
L DiCarlo – Mentor
Alessandro Bruno – Mentor
G. de Lange – Graduation committee member
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Abstract
For quantum computing with superconducting qubits, fabricating transmon qubits with increased coherence time is crucial, especially in view of multi-qubit quantum processors. The fabrication process, geometries and materials used to fabricate a transmon qubit are similar to the fabrication of CPW resonators. However, due to shorter fabrication time and straightforward measurement scheme of the latter, finding a way to increase the internal quality factor Qi in a CPW resonator is a quick way to gain insight into methods to increase the coherence time of a transmon qubit. The main goal of this research is to characterize the Qi at cryogenic temperature and single photon level of CPW resonators that are fabricated with novel surface treatments and etching techniques. The highest Qi is observed for resonators etched using Deep Reactive Ion Etching and HDMS surface treatment, which reached ∼106 at single photon level. This is comparable to the highest Qi reported in literature so far.