AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

Doctoral thesis (2019)

Authors

R. Sokolovskij Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 R. Sokolovskij
DOI
help_outline
https://doi.org/10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc
Gas sensor AlGaN/GaN HEMT Gate recess 2DEG H2S H2
More Info
expand_more

Published Date

2019

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.