AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications
R. Sokolovskij (TU Delft - Electronic Components, Technology and Materials)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.