Effects of Gate-Induced Electric Fields on Semiconductor Majorana Nanowires
Andrey E. Antipov (Microsoft Research)
A. Bargerbos (TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Georg W. Winkler (Microsoft Research)
Bela Bauer (Microsoft Research)
Enrico Rossi (College of William and Mary, Microsoft Research)
R. M. Lutchyn (Microsoft Research)
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Abstract
We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrödinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Landé g factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.
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