Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory

Journal article (2020)

Authors

M.R.R. Rispler QCD/Terhal Group - QuTech Advanced Research Centre , QuTech Advanced Research Centre
Pascal Cerfontaine Rheinisch-Westfälische Technische Hochschule
Veit Langrock Forschungszentrum Jülich
B.M. Terhal QCD/Terhal Group - QuTech Advanced Research Centre , QCD/Terhal Group - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Forschungszentrum Jülich
Research Group
QCD/Terhal Group (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2020 M.R.R. Rispler, Pascal Cerfontaine, Veit Langrock, B.M. Terhal
DOI
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https://doi.org/10.1103/PhysRevA.102.022416
More Info
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Published Date

2020

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Terhal Group

Abstract

Based on numerically optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of gallium arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, readout error, and quasistatic as well as fast gate noise. Considering the tradeoff between qubit readout error and dephasing time (T2) over measurement time, we identify a subthreshold region for the phase-flip code which lies within experimental reach.