Characterization of top-gated Si/SiGe devices for spin qubit applications

Conference paper (2019)

Authors

Fabio Ansaloni University of Copenhagen

C.A. Volk University of Copenhagen, QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, Services, QCD/Vandersypen Lab - QuTech Advanced Research Centre

Anasua Chatterjee University of Copenhagen

Ferdinand Kuemmeth University of Copenhagen

Research Group

QCD/Vandersypen Lab (QuTech Advanced Research Centre) (TU Delft)

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http://resolver.tudelft.nl/uuid:8f5a465f-1dbf-4634-bd46-af1ee5d12f2f

Published Date

2019

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Vandersypen Lab

Abstract

Spins in gate-defined silicon quantum dots are at the forefront of solid-state qubit research. We characterize top-gated devices fabricated from Si/SiGe heterostructures, demonstrating the formation of stable double and triple quantum dots with proximal charge-sensing dots. We also demonstrate fabrication of linear dot arrays with overlapping gate technology, thereby significantly increasing the density of control electrodes relative to our single-gate-layer devices.