Characterization of top-gated Si/SiGe devices for spin qubit applications
Fabio Ansaloni (University of Copenhagen)
Christian Volk (Kavli institute of nanoscience Delft, University of Copenhagen, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, TU Delft - TU Delft Services)
Anasua Chatterjee (University of Copenhagen)
Ferdinand Kuemmeth (University of Copenhagen)
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Abstract
Spins in gate-defined silicon quantum dots are at the forefront of solid-state qubit research. We characterize top-gated devices fabricated from Si/SiGe heterostructures, demonstrating the formation of stable double and triple quantum dots with proximal charge-sensing dots. We also demonstrate fabrication of linear dot arrays with overlapping gate technology, thereby significantly increasing the density of control electrodes relative to our single-gate-layer devices.