SWAP Gate for Spin Qubits Based on Silicon Devices Integrated with a Micromagnet
Ming Ni (University of Science and Technology of China)
Rong Long Ma (University of Science and Technology of China)
Zhen Zhen Kong (Chinese Academy of Sciences)
Xiao Xue (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
Sheng Kai Zhu (University of Science and Technology of China)
Chu Wang (University of Science and Technology of China)
Ao Ran Li (University of Science and Technology of China)
Ning Chu (University of Science and Technology of China)
Hai Ou Li (University of Science and Technology of China)
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Abstract
In our toolbox of quantum gates for spin qubits, the SWAP-family gates based on Heisenberg exchange coupling are quite versatile: the SWAP gate can help solve the connectivity problem by realizing both short- and long-range spin state transfer, while the (Formula presented) gate is a basic two-qubit entangling gate. Here we demonstrate a SWAP gate in a double quantum dot in isotopically enriched silicon in the presence of a micromagnet. We achieve a two-orders-of-magnitude adjustable ratio between the exchange coupling J and the Zeeman energy difference ΔEz, overcoming a major obstacle for a high-fidelity SWAP gate. We also calibrate the single-qubit local phases, evaluate the logical-basis fidelity of the SWAP gate, and further analyze the dominant error sources. These results pave the way for high-fidelity SWAP gates and processes based on them, such as quantum communication on chip and quantum simulation.