Fully Integrated Built-In Self Test of Millimeter-Wave LNA based on Avalanche Noise Diodes in 130 nm SiGe BiCMOS Technology

Abstract

This contribution demonstrates, for the first time, on-chip Built-In Self Test (BIST) circuits based on avalanche noise diodes, a class of devices that are recently developed up to millimeter-waves in commercial Si technologies. The proposed BIST is constituted by a Low-Noise Amplifier (LNA) integrated with an avalanche p-i-n diode. The LNA has two equal channels that can be enabled independently. The first channel is connected to the input pads and, when active, the circuit operates as a standard LNA. The second channel, instead, is tied to the noise diode through a coupling capacitor and a 6-dB resistive attenuator. If the second channel is selected, the LNA works in self-test mode. As a consequence, the LNA gain and noise figure can be determined by switching on and off the integrated noise source and measuring the output noise power in these two conditions. The fabricated LNA (14.4-dB gain and 3.8-dB noise figure) is based on a 130-nm SiGe BiCMOS technology and operates between 20 and 30 GHz, i.e., in a frequency band compatible with 5G services. The integrated noise source (avalanche p-i-n diode with attenuator) has an Excess Noise Ratio (ENR) of about 17 dB at 30 GHz when biased with a 4 mA current. Experiments shows that measurements from the input pads (LNA mode) agree with those using the internal noise source (BIST mode) within 0.7 dB for gain and 1.3 dB for noise figure.