Spin Qubits in Silicon and Germanium

Doctoral thesis (2022)

Authors

W.I.L. Lawrie QCD/Veldhorst Lab - QuTech Advanced Research Centre
Research Group
QCD/Veldhorst Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2022 W.I.L. Lawrie
DOI
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https://doi.org/10.4233/uuid:97c4ea24-9672-4e0b-b7a5-e3a48258c871
Quantum computing Quantum dots Silicon Germanium Spin qubits Semiconductors Electrons Holes Qubit arrays
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Published Date

2022

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Veldhorst Lab

Abstract

Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si) and germanium (Ge) are two elements that have played important roles in the history of classical computing, and are now poised to do the same in the future of quantum computation. In this thesis, we advance efforts in developing a quantum computer in both Si, using electron spins in Si-metaloxide- semiconductor (SiMOS) hosted quantum dots, and hole spins in planar germanium quantumwells (Ge/SiGe).