Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation

Journal Article (2010)
Author(s)

B.C. Johnson (External organisation)

GC Tettamanzi (TU Delft - QN/Photronic Devices)

A.D.C. alves (External organisation)

S Thompson (External organisation)

C Yang (External organisation)

J Verduijn (TU Delft - QN/Photronic Devices)

JA Mol (TU Delft - QN/Photronic Devices)

R. Wacquez (External organisation)

M. Vinet (External organisation)

M. Sanquer (External organisation)

S Rogge (TU Delft - QN/Photronic Devices)

DN Jamieson (External organisation)

More Info
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Publication Year
2010
Language
English
Journal title
Applied Physics Letters
Issue number
264102
Volume number
96
Downloads counter
220

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