Growth-Induced Strong Pinning Sites in Laser Ablated YBa2Cu3O7-δ Films with a Non-Random Distribution

Journal Article (1999)
Author(s)

J. M. Huijbregtse (Vrije Universiteit Amsterdam, Institute COMPAS)

F. C. Klaassen (Vrije Universiteit Amsterdam, Institute COMPAS)

R. C.F. Van Der Geest (Vrije Universiteit Amsterdam, Institute COMPAS)

B. Dam (Institute COMPAS, Vrije Universiteit Amsterdam)

R. Griessen (Vrije Universiteit Amsterdam, Institute COMPAS)

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External organisation
DOI related publication
https://doi.org/10.1023/a:1022572606787
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Publication Year
1999
Language
English
Affiliation
External organisation
Journal title
Journal of Low Temperature Physics
Issue number
3-4
Volume number
117
Pages (from-to)
663-667
Downloads counter
103

Abstract

Recently, we showed that natural linear defects are the origin of the high critical currents in laser ablated YBa 2 Cu 3 O 7-δ films. Combining wet-chemical etching and Atomic Force Microscopy, we find that these dislocations are created by island coalescence during growth. Consequently, the defect density can be reproducibly varied by manipulating the density of growth islands, which in turn depends on the substrate temperature. Interestingly, the radial defect distribution function approaches zero at small distances, indicating short range order. Therefore, we are now able to study vortex matter in films with a tailored non-random distribution of natural strong pinning sites.

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