Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics
Journal Article
(2007)
Author(s)
S Fregonese (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
Y Zhuang (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
JN Burghartz (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
Research Group
Old - EWI Ch. Integrated Sensing Devices
To reference this document use:
https://resolver.tudelft.nl/uuid:9ddced80-1dfd-4a43-b436-638dd1a34c70
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Publication Year
2007
Research Group
Old - EWI Ch. Integrated Sensing Devices
Issue number
9
Volume number
54
Pages (from-to)
2321-2326
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