Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

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Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Journal Article (2018)

Author(s)

Ihor Zadorozhnyi (Forschungszentrum Jülich)

Jing Li (Forschungszentrum Jülich)

Sergii Pud (TU Delft - Applied Sciences, Forschungszentrum Jülich)

Hanna Hlukhova (Forschungszentrum Jülich)

Volodymyr Handziuk (Forschungszentrum Jülich)

Yurii Kutovyi (Forschungszentrum Jülich)

Mykhailo Petrychuk (Taras Shevchenko National University of Kyiv)

Svetlana Vitusevich (Forschungszentrum Jülich)

Research Group

BN/Cees Dekker Lab

Nanowires Dynamic processes Gamma irradiation Single trap

DOI related publication

https://doi.org/10.1002/smll.201702516 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:9f697ed6-5ffc-479b-9526-894e3be78568

More Info

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Publication Year

2018

Language

English

Research Group

BN/Cees Dekker Lab

Journal title

Small

Issue number

2

Volume number

14

Article number

1702516

Downloads counter

220

Abstract

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.