Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma

Journal article (2015)
Department
Electrical Sustainable Energy (EEMCS) (TU Delft)
Copyright: © 2015 AIP Publishing
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Published Date

27-05-2015

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Source:

Applied Physics Letters, 106 (21), 2015

ISSN:

0003-6951

ISBN:

0003-6951

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Abstract

The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution transmission electron microscopy images, and routes to reduce the unwanted large Si NCs are discussed. Photoluminescence and Raman spectroscopies are employed to study the size-dependent quantum confinement effect, from which the average diameters of the small Si NCs are determined. The surface oxidation kinetics of Si NCs are studied using Fourier transform infrared spectroscopy and the importance of postdeposition passivation treatments of hydrogenated crystalline silicon surfaces are demonstrated.

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