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Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films

Journal Article (2016)
Author(s)

O. Yildirim (Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research)

S. Cornelius (TU Delft - Applied Sciences, Institute of Ion Beam Physics and Materials Research)

A. Smekhova (Universität Duisburg-Essen, Moscow State University)

M. Butterling (Institute of Radiation Physics)

W. Anwand (Institute of Radiation Physics)

A. Wagner (Institute of Radiation Physics)

C. Bähtz (Institute of Ion Beam Physics and Materials Research, European Synchrotron Radiation Facility)

R. Böttger (Institute of Ion Beam Physics and Materials Research)

K. Potzger (Institute of Ion Beam Physics and Materials Research)

Research Group
ChemE/Materials for Energy Conversion and Storage
DOI related publication
https://doi.org/10.1016/j.nimb.2016.11.009 Final published version
More Info
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Publication Year
2016
Language
English
Research Group
ChemE/Materials for Energy Conversion and Storage
Volume number
389-390
Pages (from-to)
13-16
Downloads counter
235

Abstract

Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.