Threshold concentration for ion implantation-induced Co nanocluster formation in TiO<sub>2</sub>:Co thin films

Journal article (2016)

Authors

O. Yildirim Institute of Ion Beam Physics and Materials Research, Technische Universität Dresden
S. Cornelius Institute of Ion Beam Physics and Materials Research, ChemE/Materials for Energy Conversion and Storage - AS
A. Smekhova Universität Duisburg-Essen, Moscow State University
M. Butterling Institute of Radiation Physics
W. Anwand Institute of Radiation Physics
A.S. Wagner Institute of Radiation Physics
C. Bähtz Institute of Ion Beam Physics and Materials Research, European Synchrotron Radiation Facility
R. Böttger Institute of Ion Beam Physics and Materials Research
K. Potzger Institute of Ion Beam Physics and Materials Research
Research Group
ChemE/Materials for Energy Conversion and Storage (AS) (TU Delft)
Nanoclusters Ion implantation Dilute magnetic oxide
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Published Date

15-12-2016

Language

English

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Materials for Energy Conversion and Storage

Abstract

Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.