Fundamental Mechanisms Behind the Reverse Characteristic of Cu(In,Ga)Se<sub>2</sub> Solar Cells

Journal article (2022)

Authors

N.J. Bakker TNO, Photovoltaic Materials and Devices - EEMCS
N. Barreau Université de Nantes
A.W. Weeber TNO, Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2022 N.J. Bakker, Suzanne Assen, Alix Rasia, Nicolas Barreau, A.W. Weeber, Mirjam Theelen
DOI
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https://doi.org/10.1109/JPHOTOV.2022.3196827
Partial shading Cu(In,Ga)Se2 (CIGS) Reverse bias Thin-film PV
More Info
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Published Date

2022

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Partial shading of PV modules can lead to degradation of the shaded cells. The degradation originates from a reverse bias voltage over the shaded cells. In order to mitigate reverse bias damage in Cu(In, Ga)Se2 (CIGS) modules, a good understanding of the fundamental mechanisms governing the reverse characteristic is required. In this study, a model is introduced that describes this behavior for CIGS cells. In this model, the low and non-Ohmic leakage current is accounted for by the space charge limited current component. A sharp increase in current that is typically observed in the CIGS reverse characteristics can be described by Fowler-Nordheim tunneling. This model has been validated against measurements performed at different temperatures and illumination intensities, and is able to describe the dependencies of the reverse bias behavior on both temperature and illumination.