Direct transformation of crystalline MoO3 into few-layers MoS2
Felix Carrascoso (Instituto de Ciencia de Materiales de Madrid (ICMM))
Gabriel Sánchez-Santolino (Universidad Complutense de Madrid, Instituto de Ciencia de Materiales de Madrid (ICMM))
Chun Wei Hsu (TU Delft - QN/van der Zant Lab, Kavli institute of nanoscience Delft)
Norbert M. Nemes (Universidad Complutense de Madrid)
Almudena Torres-Pardo (Universidad Complutense de Madrid)
Patricia Gant (Instituto de Ciencia de Materiales de Madrid (ICMM))
Federico J. Mompeán (Instituto de Ciencia de Materiales de Madrid (ICMM))
Kourosh Kalantar-zadeh (University of New South Wales)
José A. Alonso (Instituto de Ciencia de Materiales de Madrid (ICMM))
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Abstract
We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300 × 300 μm2, 2-4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.