Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot
Kai Chun Ning (University of Science and Technology of China)
X. Zhang (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Rong-Long Ma (University of Science and Technology of China)
Zhen-Zhen Kong (Chinese Academy of Sciences)
Wei-Zhu Liao (University of Science and Technology of China)
Sheng-Kai Zhu (University of Science and Technology of China)
Chu Wang (University of Science and Technology of China)
Gui-Lei Wang (Beijing Superstring Academy of Memory Technology, University of Science and Technology of China)
Hai-Ou Li (University of Science and Technology of China)
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Abstract
Synthesized spin–orbit coupling (SSOC) is crucial for the operation of spin qubits in silicon quantum dot, as it address the challenge posed by the inherently weak intrinsic spin–orbit coupling in silicon. Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-semiconductor (Si-MOS) quantum dot and provide experimental evidence for the control of SSOC. Additionally, we experimentally demonstrate that tuning the operating point away from the conventional configuration can enhance the quality factor of the spin qubit. These findings lay a foundation for the realization of high-quality tunable spin–orbit qubits.
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