Control of recoil losses in nanomechanical SiN membrane resonators

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Control of recoil losses in nanomechanical SiN membrane resonators

Journal Article (2016)

Author(s)

A. Borrielli (Trento Institute for Fundamental Physics and Applications, Institute of Materials for Electronics and Magnetism - Nanoscience-Trento-FBK Division)

L. Marconi (Istituto Nazionale di Fisica Nucleare - Sezione di Firenze, Istituto Nazionale di Ottica, Consiglio Nazionale delle Ricerche)

F. Marin (University of Florence, Istituto Nazionale di Ottica, Consiglio Nazionale delle Ricerche, Istituto Nazionale di Fisica Nucleare - Sezione di Firenze, European Laboratory for Non-linear Spectroscopy (LENS))

F. Marino (Istituto Nazionale di Fisica Nucleare - Sezione di Firenze, Istituto Nazionale di Ottica, Consiglio Nazionale delle Ricerche)

B. Morana (TU Delft - EKL-Users, Institute of Materials for Electronics and Magnetism - Nanoscience-Trento-FBK Division)

G. Pandraud (TU Delft - EKL Processing)

A. Pontin (University of Florence, Istituto Nazionale di Fisica Nucleare - Sezione di Firenze)

G.A. Prodi (Università degli Studi di Trento, Trento Institute for Fundamental Physics and Applications)

P.M. Sarro (TU Delft - Electronic Components, Technology and Materials)

E. Serra (TU Delft - Electronic Components, Technology and Materials, Trento Institute for Fundamental Physics and Applications)

M. Bonaldi (Institute of Materials for Electronics and Magnetism - Nanoscience-Trento-FBK Division, Trento Institute for Fundamental Physics and Applications)

Research Group

EKL-Users

DOI related publication

https://doi.org/10.1103/PhysRevB.94.121403

To reference this document use:

https://resolver.tudelft.nl/uuid:b345fad3-33b9-4a10-896a-8a00bf14ba6c

More Info

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Publication Year

2016

Language

English

Research Group

EKL-Users

Journal title

Physical Review X

Issue number

12

Volume number

94

Article number

121403

Pages (from-to)

121403-1/121403-5

Downloads counter

277

Abstract

In the context of a recoil damping analysis, we have designed and produced a membrane resonator equipped with a specific on-chip structure working as a "loss shield" for a circular membrane. In this device the vibrations of the membrane, with a quality factor of 107, reach the limit set by the intrinsic dissipation in silicon nitride, for all the modes and regardless of the modal shape, also at low frequency. Guided by our theoretical model of the loss shield, we describe the design rationale of the device, which can be used as effective replacement of commercial membrane resonators in advanced optomechanical setups, also at cryogenic temperatures.

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