Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

Conference paper (2018)

Authors

Wenmao Li Southern University of Science and Technology
Jian Zhang Fudan University
R. Sokolovskij Electronic Components, Technology and Materials - EEMCS , Southern University of Science and Technology, State Key Laboratory of Solid State Lighting
Yumeng Zhu Southern University of Science and Technology
Yongle Qi Southern University of Science and Technology
Xinpeng Lin Southern University of Science and Technology
Jingyi Wu Southern University of Science and Technology
Lingli Jiang Southern University of Science and Technology
Hongyu Yu Southern University of Science and Technology
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Silicon Annealing Substrates Metals Ohmic contacts Contact resistance Gallium nitride
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Published Date

2018

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (20/110/40/50 nm) stacks, respectively. It also shows that the substrate material and epitaxial structure play an important role in ohmic contact engineering. For CMOS compatible Au-free structures, the Ti/Al/W (20/100/30 nm), Ti/Al/Ni/W (20/100/20/10 nm) and (20/100/10/20 nm) are demonstrated with the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively. The three metal stacks of Au-free ohmic contact are compared and obtained results are explained.

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