Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None

Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

Conference Paper (2018)

Author(s)

Wenmao Li (Southern University of Science and Technology )

Jian Zhang (Fudan University)

Robert Sokolovskij (State Key Laboratory of Solid State Lighting, TU Delft - Electronic Components, Technology and Materials, Southern University of Science and Technology )

Yumeng Zhu (Southern University of Science and Technology )

Yongle Qi (Southern University of Science and Technology )

Xinpeng Lin (Southern University of Science and Technology )

Jingyi Wu (Southern University of Science and Technology )

Lingli Jiang (Southern University of Science and Technology )

Hongyu Yu (Southern University of Science and Technology )

Silicon Annealing Substrates Metals Ohmic contacts Contact resistance Gallium nitride

DOI related publication

https://doi.org/10.1109/IWJT.2018.8330288 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:bb1fe7ca-d239-41b6-911f-24eab3e70879

More Info

expand_more

Publication Year

2018

Language

English

Volume number

2018-January

Pages (from-to)

1-4

ISBN (print)

978-1-5386-4511-6

ISBN (electronic)

978-1-5386-4513-0

Event

Downloads counter

281

Abstract

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (20/110/40/50 nm) stacks, respectively. It also shows that the substrate material and epitaxial structure play an important role in ohmic contact engineering. For CMOS compatible Au-free structures, the Ti/Al/W (20/100/30 nm), Ti/Al/Ni/W (20/100/20/10 nm) and (20/100/10/20 nm) are demonstrated with the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively. The three metal stacks of Au-free ohmic contact are compared and obtained results are explained.