Heterointerface effects on the charging energy of the shallow D? ground state in silicon

Role of dielectric mismatch

Journal article (2010)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2010 The Author(s); American Physical Society
DOI: https://doi.org/doi:10.1103/PhysRevB.82.075317
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Published Date

17-08-2010

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Source:

Physical Review B, 82 (7), 2010

ISSN:

1098-0121

Source:

http://prb.aps.org/abstract/PRB/v82/i7/e075317

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured reduction in the charging energy (measurements also presented here) may be due to a combined effect of the insulator screening and the proximity of metallic gates.