Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

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Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Journal Article (2022)

Author(s)

Sadik Ilik (Istanbul Technical University)

Mustafa Berke Yelten (Istanbul Technical University)

Affiliation

External organisation

Degradation Ionizing radiation Radiation effects Amplifier Radio frequency Transistors Threshold voltage TID Integrated circuit modeling Analog circuits Cascode Common gate Common source Leakage currents Total ionizing dose

DOI related publication

https://doi.org/10.1109/TDMR.2022.3227766 Final published version

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https://resolver.tudelft.nl/uuid:bd6e9e12-7fd8-440f-b5e1-c92ff93147d9

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Publication Year

2022

Language

English

Affiliation

External organisation

Issue number

1

Volume number

23

Pages (from-to)

51-57

Downloads counter

139

Abstract

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre-and post-irradiation conditions.