Position controlled nanowires for infrared single photon emission

Journal article (2010)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3506499
Nanowires Nanofabrication Excitons Photoluminescence Indium compounds III-V semiconductors Infrared spectra Semiconductor quantum dots Semiconductor growth Semiconductor quantum wires Biexcitons Epitaxial growth
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Published Date

28-10-2010

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Source:

Applied Physics Letters, 97 (17), 2010

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://apl.aip.org/resource/1/applab/v97/i17/p171106_s1

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum dots show narrow emission lines. Superconducting single photon detectors, which have a higher sensitivity than avalanche photodiodes in the infrared, enable us to measure auto and cross correlations. Clear antibunching is observed [g(2)(0) = 0.12] and we show a biexciton–exciton cascade, which can be used to create entangled photon pairs.

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