Guanidium-assisted crystallization engineering for highly efficient CsPbI<sub>3</sub> solar cells

Journal article (2022)

Authors

Shuo Wang Lanzhou University
Youkui Xu Lanzhou University
Qian Wang Lanzhou University
Xufeng Zhou Liaocheng University
ZhenHua Li Lanzhou University
Meng Wang Lanzhou University
Yutian Lei Lanzhou University
Hong Zhang Lanzhou University
H. Wang Photovoltaic Materials and Devices - EEMCS
Zhiwen Jin Lanzhou University
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2022 Shuo Wang, Youkui Xu, Qian Wang, Xufeng Zhou, ZhenHua Li, Meng Wang, Yutian Lei, Hong Zhang, H. Wang, Zhiwen Jin
DOI
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https://doi.org/10.1039/d2tc01008a
More Info
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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Iodine vacancies and uncoordinated iodide ions of CsPbI3 films are mainly responsible for nonradiative recombination. Here, we report a composition-engineering passivation method that through guanidium (GA+) and I− forms strong hydrogen bonds to passivate iodine vacancies and reduce defects. Both experimental and theoretical results confirmed strong chemical interactions between GA+ and uncoordinated I− in the GAxCs1−xPbI3 bulk or at the grain boundary. Moreover, GA+ doping could slow down the crystallization speed of perovskite films during the deposition process. As a result, we observed GA+ modified films with much lower defect density, larger grain size, and better carrier extraction and transportation. Upon GA+ passivation, the power conversion efficiency (PCE) is boosted from 18.01% to 19.05%, with open-circuit voltage (VOC) enhancement from 1.08 V to 1.14 V.

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