Oxygen-plasma-based digital etching for gan/algan high electron mobility transistors

Conference paper (2019)

Authors

Jingyi Wu Southern University of Science and Technology
Hongyu Yu Southern University of Science and Technology
Yang Jiang Southern University of Science and Technology
Zeyu Wan The Hong Kong University of Science and Technology, Southern University of Science and Technology
Siqi Lei Harbin Institute of Technology, Southern University of Science and Technology
Wei-Chih Cheng University of British Columbia, Southern University of Science and Technology
Guangnan Zhou Southern University of Science and Technology
R. Sokolovskij Electronic Components, Technology and Materials - EEMCS
Qing Wang University of British Columbia, Southern University of Science and Technology
Guangrui Maggie Xia Southern University of Science and Technology
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O2-plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important process aspects such as the use of the AlN layers, the RF power, the oxygen flow rate, the oxidation time and the resulting roughness were studied. These are technically relevant to obtain controllable, uniform etch surfaces with low surface damages for better HEMT performance.