Oxygen-plasma-based digital etching for gan/algan high electron mobility transistors
Jingyi Wu (Southern University of Science and Technology )
Hongyu Yu (Southern University of Science and Technology )
Yang Jiang (Southern University of Science and Technology )
Zeyu Wan (The Hong Kong University of Science and Technology, Southern University of Science and Technology )
Siqi Lei (Southern University of Science and Technology , Harbin Institute of Technology)
Wei Chih Cheng (Southern University of Science and Technology , University of British Columbia)
Guangnan Zhou (Southern University of Science and Technology )
Robert Sokolovskij (TU Delft - Electronic Components, Technology and Materials)
Qing Wang (University of British Columbia, Southern University of Science and Technology )
Guangrui Maggie Xia (Southern University of Science and Technology )
More Info
expand_more
Abstract
Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O2-plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important process aspects such as the use of the AlN layers, the RF power, the oxygen flow rate, the oxidation time and the resulting roughness were studied. These are technically relevant to obtain controllable, uniform etch surfaces with low surface damages for better HEMT performance.