Comparative Study of Millimeter-Wave Avalanche Noise Diodes in Different Si Technologies

Conference Paper (2024)
Author(s)

S.N.D. An

G. Schiavolini

G. Simoncini (UniversitĂ  degli Studi di Perugia)

G. Orecchini

J.A. Goncalves

C.B. Goncalves

F. Alimenti

Affiliation
External organisation
DOI related publication
https://doi.org/10.23919/EuMIC61603.2024.10732305 Final published version
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Publication Year
2024
Language
English
Affiliation
External organisation
Pages (from-to)
424-427
ISBN (print)
9782874870781
Downloads counter
42

Abstract

Solid-state noise sources are essential components in highly reliable mm-wave systems for life- or mission-critical applications such as self-driving car radars, airborne and satellite communication systems, space science instruments, and 6G to THz communications. Integrating a noise source, typically based on the avalanche effect of diode junctions, allows for testing of the architecture during production and operational lifetime. This paper presents a comparative study of three avalanche noise diodes integrated in different silicon technologies. The study is based on a solid experimental work that highlights the key points for a successful device design aimed at increasing the generated noise power, bandwidth, and operating frequency.