Vertical SiC taper with a small angle fabricated by slope transfer method
Yu Xin (State Key Laboratory of NBC Protection for Civilian, Beijing)
G Pandraud (TU Delft - EKL Processing)
P. J. French (TU Delft - Electronic Instrumentation)
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Abstract
In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can bring the coupling efficiency in SiC waveguides to 80% (around 1 dB loss) or better from around 10% (10 dB loss) without taper. It further increases the alignment tolerance at the same time, which ensures the successful development of a plug-and-play solution for optical sensing. This is the first reported taper made in SiC.
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