Scaling of nano-Schottky-diodes

Journal article (2002)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2002 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.1521251
Nanotechnology Schottky diodes Schottky barriers
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Published Date

11-11-2002

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Source:

Applied Physics Letters, 81 (20), 2002

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v81/i20/p3852/s1

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.

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