Measurement of the transmission secondary electron yield of nanometer-thick films in a prototype Timed Photon Counter

Journal article (2020)

Authors

T.H.A. van der Reep ImPhys/Microscopy Instrumentation & Techniques - AS , Nikhef
B.A. Looman ImPhys/Microscopy Instrumentation & Techniques - AS
H.W. Chan Electronic Components, Technology and Materials - EEMCS , Nikhef
C.W. Hagen ImPhys/Microscopy Instrumentation & Techniques - AS
H. van der Graaf ImPhys/Microscopy Instrumentation & Techniques - AS , Nikhef
Research Group
ImPhys/Microscopy Instrumentation & Techniques (AS) (TU Delft)
Copyright: © 2020 T.H.A. van der Reep, B.A. Looman, H.W. Chan, C.W. Hagen, H. van der Graaf
DOI: https://doi.org/10.1088/1748-0221/15/10/P10022
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Published Date

2020

Language

English

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Faculty

Applied Sciences

Department

ImPhys/Imaging Physics

Research Group

ImPhys/Microscopy Instrumentation & Techniques

Abstract

We measure the transmission secondary electron yield of nanometer-thick Al2O3/TiN/Al2O3 films using a prototype version of a Timed Photon Counter (TiPC). We discuss the method to measure the yield extensively. The yield is then measured as a function of landing energy between 1.2 and 1.8 keV and found to be in the range of 0.1 (1.2 keV) to 0.9 (1.8 keV). These results are in agreement to data obtained by a different, independent method. We therefore conclude that the prototype TiPC is able to characterise the thin films in terms of transmission secondary electron yield. Additionally, observed features which are unrelated to the yield determination are interpreted.

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