SIMPLY+
A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing
Tatiana Moposita (Institut Supérieur d’Electronique de Paris,, Sorbonne Université, University of Calabria)
Esteban Garzon (University of Calabria)
Raffaele De Rose (University of Calabria)
Felice Crupi (University of Calabria)
Andrei Vladimirescu (TU Delft - QCD/Sebastiano Lab)
Lionel Trojman (Institut Supérieur d’Electronique de Paris,)
Marco Lanuzza (University of Calabria)
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Abstract
This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from the previously proposed smart material implication (SIMPLY) logic scheme. More specifically, the latter is enhanced by incorporating additional circuitry to enhance the reliability of preliminary read operations. In this study, the proposed architecture is benchmarked against its conventional counterpart. Obtained results show a significant improvement in terms of reliability, i.e., the nominal read margin (RM) by a factor of ~3 - 4× and accordingly the bit error rate (BER) by more than four orders of magnitude. These improvements come at minimal cost in terms of circuit area and complexity compared to the conventional SIMPLY design. Overall, this research establishes SIMPLY+ as a promising solution for the design of reliable and energy-efficient in-memory computing architectures.
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