Crystal orientation and grain size
Do they determine optoelectronic properties of MAPbI3 Perovskite?
Loreta A. Muscarella (AMOLF Institute for Atomic and Molecular Physics)
E.M. Hutter (AMOLF Institute for Atomic and Molecular Physics)
Sandy Sanchez (École Polytechnique Fédérale de Lausanne)
Christian D. Dieleman (AMOLF Institute for Atomic and Molecular Physics)
T. J. Savenije (TU Delft - ChemE/Opto-electronic Materials)
Anders Hagfeldt (École Polytechnique Fédérale de Lausanne)
Michael Saliba (Technische Universität Darmstadt, Forschungszentrum Jülich)
Bruno Ehrler (AMOLF Institute for Atomic and Molecular Physics)
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Abstract
Growing large, oriented grains of perovskite often leads to efficient devices, but it is unclear if properties of the grains are responsible for the efficiency. Domains observed in SEM are commonly misidentified with crystallographic grains, but SEM images do not provide diffraction information. We study methylammoinium lead iodide (MAPbI3) films fabricated via flash infrared annealing (FIRA) and the conventional antisolvent (AS) method by measuring grain size and orientation using electron back-scattered diffraction (EBSD) and studying how these affect optoelectronic properties such as local photoluminescence (PL), charge carrier lifetimes, and mobilities. We observe a local enhancement and shift of the PL emission at different regions of the FIRA clusters, but we observe no effect of crystal orientation on the optoelectronic properties. Additionally, despite substantial differences in grain size between the two systems, we find similar optoelectronic properties. These findings show that optoelectronic quality is not necessarily related to the orientation and size of crystalline domains.
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