Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films

Journal article (2011)
Faculty
Applied Sciences (AS) (TU Delft)
Copyright: American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3592229
Charge-ordered states Colossal magnetoresistance Curie temperature Magnetic epitaxial layers Metal-insulator transition Neodymium compounds Sputter deposition Strontium compounds
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Published Date

01-04-2011

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Source:

Low Temperature Physics, 37 (4), 2011

ISSN:

1063-777X

Source:

http://link.aip.org/link/doi/10.1063/1.3592229

Faculty

Applied Sciences

Abstract

Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO3 (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60?000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.