Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

Journal article (2013)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: © 2013 AIP Publishing LLC
DOI: https://doi.org/doi:10.1063/1.4828555
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Published Date

01-11-2013

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Source:

Applied Physics Letters, 103 (18), 2013

ISSN:

0003-6951

ISBN:

0003-6951

Source:

d607090d-5462-4536-8d16-85413082fdde

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140?GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before.