SecureMem

Efficient flexible Pt/GO/Cu memristor for true random number generation

Journal Article (2021)
Author(s)

Heba Abunahla (Khalifa University of Science and Technology)

Khaled Humood (Khalifa University of Science and Technology)

Anas Alazzam (Khalifa University of Science and Technology)

Baker Mohammad (Khalifa University of Science and Technology)

Affiliation
External organisation
DOI related publication
https://doi.org/10.1088/2058-8585/ac1501 Final published version
More Info
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Publication Year
2021
Language
English
Affiliation
External organisation
Journal title
Flexible and Printed Electronics
Issue number
3
Volume number
6
Article number
035004
Downloads counter
15

Abstract

This work reports on flexible cost-effective memristor device synthesis, using Pt/GO/Cu structure. The memristor is fabricated on flexible substrate and it preserves its switching ability at a bending angle of up to 60. Compared to the state of the art, in our fabrication method, the graphene oxide (GO) film is deposited directly to the device using spin coating. The fabricated memristor stack exhibits tunable volatility based on the used compliance current, which expands its application horizon for memory, computing and security schemes. In this work, the non-volatile regime along with the natural stochasticity of the switching behavior of the device, named SecureMem, are utilized for efficient true random number generation. A prototype of the full system interfacing with microcontroller is built to get SecureMem ready for integration with other circuits and systems. The randomness of the data generated by SecureMem prototype is confirmed by passing all National Institute of Standards and Technology tests without any post-processing or hardware overhead. SecureMem is considered a great asset as it provides new insights for highly efficient cost-effective hardware security in smart wearable devices.