High-resolution EELS study of the vacancy-doped metal/insulator system, Nd1-xTiO3, x=0 to 0.33.

Sefat, AS; Amow, G; Wu, M.; Botton, GA; Greedan, JE

High-resolution EELS study of the vacancy-doped metal/insulator system, Nd1-xTiO3, x=0 to 0.33.

Journal article (2005)

Authors

AS Sefat External organisation

G Amow External organisation

M. Wu

GA Botton External organisation

JE Greedan External organisation

To reference this document use:

http://resolver.tudelft.nl/uuid:e21cdac1-100e-4e22-a76e-156695f86df5

More Info

expand_more

Published Date

2005

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

No files available

Metadata only record. There are no files for this journal article.