Stabilizing the Inverted Phase of a WSe2/BLG/WSe2 Heterostructure via Hydrostatic Pressure

Journal Article (2023)
Author(s)

Máté Kedves (Budapest University of Technology and Economics, MTA-BME)

Bálint Szentpéteri (Budapest University of Technology and Economics, MTA-BME)

Albin Márffy (MTA-BME, Budapest University of Technology and Economics)

Endre Tóvári (MTA-BME, Budapest University of Technology and Economics)

Nikos Papadopoulos (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - BUS/TNO STAFF)

Prasanna K. Rout (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Goswami Lab)

Kenji Watanabe (National Institute for Materials Science)

Takashi Taniguchi (National Institute for Materials Science)

Srijit Goswami (TU Delft - QRD/Goswami Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)

Peter Makk (MTA-BME, Budapest University of Technology and Economics)

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Research Group
QRD/Goswami Lab
DOI related publication
https://doi.org/10.1021/acs.nanolett.3c03029
More Info
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Publication Year
2023
Language
English
Research Group
QRD/Goswami Lab
Journal title
Nano Letters
Issue number
20
Volume number
23
Pages (from-to)
9508-9514
Downloads counter
386
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Abstract

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe2) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.