Gate-Tunable Kinetic Inductance in Proximitized Nanowires
L.J. Splitthoff (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft)
A. Bargerbos (Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre)
Lukas Grünhaupt (TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
M. Pita-Vidal (Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre)
Jaap Joachim Wesdorp (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft)
Yu Liu (University of Copenhagen)
Angela Kou (University of Illinois at Urbana Champaign)
Christian Kraglund Andersen (TU Delft - QuTech Advanced Research Centre, TU Delft - Andersen Lab, Kavli institute of nanoscience Delft)
B. Van Heck (Universiteit Leiden)
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Abstract
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we embed the nanowire into a quarter-wave coplanar waveguide resonator and measure the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal-state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a useful tool for gate-controlled superconducting electronics.