Momentum-resolved fingerprint of Mottness in layer-dimerized Nb3Br8
Mihir Date (Diamond Light Source, Max Planck Institute of Microstructure Physics)
Francesco Petocchi (Université de Genève)
Yun Yen (Paul Scherrer Institut, École Polytechnique Fédérale de Lausanne)
Chris Körner (Martin-Luther-Universität Halle-Wittenberg)
Mazhar N. Ali (TU Delft - QN/Ali Lab, Max Planck Institute of Microstructure Physics, Kavli institute of nanoscience Delft)
Michael A. Sentef (Universität Bremen)
Georg Woltersdorf (Martin-Luther-Universität Halle-Wittenberg)
Michael Schüler (University of Fribourg, Paul Scherrer Institut)
Claudia Felser (Max Planck Institute for Chemical Physics of Solids)
Niels B.M. Schröter (Max Planck Institute of Microstructure Physics)
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Abstract
Crystalline solids can become band insulators due to fully filled bands, or Mott insulators due to strong electronic correlations. While Mott insulators can theoretically occur in systems with an even number of electrons per unit cell, distinguishing them from band insulators experimentally has remained a longstanding challenge. In this work, we present a unique momentum-resolved signature of a dimerized Mott-insulating phase in the experimental spectral function of Nb3Br8: the top of the highest occupied band along the out-of-plane direction kz has a momentum-space separation Δkz = 2π/d, whereas that of a band insulator is less than π/d, where d is the average interlayer spacing. Identifying Nb3Br8 as a Mott insulator is crucial to understand its role in the field-free Josephson diode effect. Moreover, our method could be extended to other van der Waals systems where tuning interlayer coupling and Coulomb interactions can drive a band- to Mott-insulating transition.
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