Can we use time-resolved measurements to get steady-state transport data for halide perovskites?

Journal Article (2018)
Author(s)

Igal Levine (Weizmann Institute of Science)

Satyajit Gupta (Weizmann Institute of Science)

Achintya Bera (Weizmann Institute of Science)

Davide Ceratti (Weizmann Institute of Science)

Gary Hodes (Weizmann Institute of Science)

David Cahen (Weizmann Institute of Science)

Dengyang Guo (TU Delft - Applied Sciences)

Tom J. Savenije (TU Delft - Applied Sciences)

Jorge Ávila (Universidad de Valencia (ICMol))

Henk J. Bolink (Universidad de Valencia (ICMol))

Oded Millo (The Hebrew University of Jerusalem)

Doron Azulay (Jerusalem College of Engineering, The Hebrew University of Jerusalem)

Isaac Balberg (The Hebrew University of Jerusalem)

Research Group
ChemE/Opto-electronic Materials
DOI related publication
https://doi.org/10.1063/1.5037637 Final published version
More Info
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Publication Year
2018
Language
English
Research Group
ChemE/Opto-electronic Materials
Issue number
10
Volume number
124
Article number
103103
Downloads counter
250

Abstract

Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. However, as yet, no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady-state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state parameters. To answer the latter question, we revisited pulsed excitation and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We performed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed time-resolved microwave conductivity and time-resolved photoluminescence measurements as a function of excitation intensity on the same samples of different MAPbI3 thin films, and found good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of phototransport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective recombination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of excitation intensity.