Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection
Jian Zhang (Southern University of Science and Technology , Fudan University, Shenzhen Key Laboratory of the Third Generation Semi-conductor)
R. Sokolovskij (State Key Laboratory of Solid State Lighting, TU Delft - Electronic Components, Technology and Materials, Southern University of Science and Technology )
Ganhui Chen (Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology )
Yumeng Zhu (Southern University of Science and Technology , Shenzhen Key Laboratory of the Third Generation Semi-conductor)
Yongle Qi (Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology )
Xinpeng Lin (Southern University of Science and Technology , Shenzhen Key Laboratory of the Third Generation Semi-conductor)
Wenmao Li (Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology )
G. Zhang (TU Delft - Signal Processing Systems)
Yu-Long Jiang (Fudan University)
Hongyu Yu (Southern University of Science and Technology , Shenzhen Key Laboratory of the Third Generation Semi-conductor)
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Abstract
In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.
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