Impact of high temperature H<sub>2</sub> pre-treatment on Pt-AlGaN/GaN HEMT sensor for H<sub>2</sub>S detection

Journal article (2019)

Authors

Jian Zhang Southern University of Science and Technology, Shenzhen Key Laboratory of the Third Generation Semi-conductor, Fudan University
R. Sokolovskij Southern University of Science and Technology, State Key Laboratory of Solid State Lighting, Electronic Components, Technology and Materials - EEMCS
Ganhui Chen Southern University of Science and Technology, Shenzhen Key Laboratory of the Third Generation Semi-conductor
Yumeng Zhu Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Yongle Qi Southern University of Science and Technology, Shenzhen Key Laboratory of the Third Generation Semi-conductor
Xinpeng Lin Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Wenmao Li Southern University of Science and Technology, Shenzhen Key Laboratory of the Third Generation Semi-conductor
G. Zhang Signal Processing Systems - EEMCS
Yu-Long Jiang Fudan University
Hongyu Yu Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 Jian Zhang, R. Sokolovskij, Ganhui Chen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, G. Zhang, Yu-Long Jiang, Hongyu Yu
DOI
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https://doi.org/10.1016/j.snb.2018.10.052
Gas sensor AlGaN/GaN HEMT H2S Pt
More Info
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Published Date

2019

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.