Print Email Facebook Twitter A 2D quantum dot array in planar 28Si/SiGe Title A 2D quantum dot array in planar 28Si/SiGe Author Unseld, F.K. (TU Delft QCD/Vandersypen Lab; Kavli institute of nanoscience Delft; QuTech) Meyer, M. (TU Delft QCD/Veldhorst Lab; Kavli institute of nanoscience Delft; QuTech) Madzik, M.T. (TU Delft QCD/Vandersypen Lab; Kavli institute of nanoscience Delft; QuTech) Borsoi, F. (TU Delft QCD/Veldhorst Lab; Kavli institute of nanoscience Delft; QuTech) de Snoo, S.L. (TU Delft QCD/Vandersypen Lab; Kavli institute of nanoscience Delft; QuTech) Amitonov, S. (TU Delft BUS/TNO STAFF; Kavli institute of nanoscience Delft; QuTech) Sammak, A. (TU Delft BUS/TNO STAFF; QuTech) Scappucci, G. (TU Delft QCD/Scappucci Lab; Kavli institute of nanoscience Delft; QuTech) Veldhorst, M. (TU Delft QN/Veldhorst Lab; Kavli institute of nanoscience Delft) Vandersypen, L.M.K. (TU Delft QuTech Advanced Research Centre; TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft; QuTech) Date 2023 Abstract Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 × 2 quantum dot array in a 28Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore, we characterize and control the tunnel coupling between all pairs of dots by measuring polarization lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about 30 μ eV up to approximately 400 μ eV . These experiments provide insightful information on how to design 2D quantum dot arrays and constitute a first step toward the operation of spin qubits in 28Si/SiGe quantum dots in two dimensions. To reference this document use: http://resolver.tudelft.nl/uuid:026715ab-23e0-4b0e-9f13-31fada443d9f DOI https://doi.org/10.1063/5.0160847 ISSN 0003-6951 Source Applied Physics Letters, 123 (8) Part of collection Institutional Repository Document type journal article Rights © 2023 F.K. Unseld, M. Meyer, M.T. Madzik, F. Borsoi, S.L. de Snoo, S. Amitonov, A. Sammak, G. Scappucci, M. Veldhorst, L.M.K. Vandersypen Files PDF 084002_1_5.0160847.pdf 1.65 MB Close viewer /islandora/object/uuid:026715ab-23e0-4b0e-9f13-31fada443d9f/datastream/OBJ/view