A CMOS-Compatible Hybrid Plasmonic Slot Waveguide With Enhanced Field Confinement

Journal article (2016)

Authors

Jing Xiao Guilin University of Electronic Technology
Qi-Qin Wei Guilin University of Electronic Technology
Daoguo Yang Guilin University of Electronic Technology
Ping Zhang Guilin University of Electronic Technology
Ning He Guilin University of Electronic Technology
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Tian-Ling Ren Tsinghua University
XP Chen Guilin University of Electronic Technology
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2016 Jing Xiao, Qi-Qin Wei, Daoguo Yang, Ping Zhang, Ning He, Kouchi Zhang, Tian-Ling Ren, Xian-Ping Chen
DOI: https://doi.org/10.1109/LED.2016.2531990
Multi-layer structure Hybrid plasmonic slot waveguide Field confinement
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Published Date

2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.

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