Print Email Facebook Twitter Photoluminescence enhancement in thin films of PbSe nanocrystals Title Photoluminescence enhancement in thin films of PbSe nanocrystals Author Christova, C.G. Stouwdam, J.W. Eijkemans, T.J. Silov, A.Y. Van der Heijden, R.W. Kemerink, M. Janssen, R.A.J. Salemink, H.W.M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2008-09-23 Abstract Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2 substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation intensity, being higher for a weaker irradiation power. The possible mechanisms behind the phenomenon of the PLE are discussed and it is suggested to originate mainly from charge trapping outside the NCs core. Subject excited statesIV-VI semiconductorslead compoundsmonolayersnanostructured materialsnanotechnologyphotoluminescencesemiconductor thin films To reference this document use: http://resolver.tudelft.nl/uuid:1d7d602e-6a4b-407e-bcc2-8c9f44e4d9d2 DOI https://doi.org/10.1063/1.2989131 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v93/i12/p121906/s1 Source Applied Physics Letters, 93 (12), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s); American Institute of Physics Files PDF Salemink_2008.pdf 242.53 KB Close viewer /islandora/object/uuid:1d7d602e-6a4b-407e-bcc2-8c9f44e4d9d2/datastream/OBJ/view