Print Email Facebook Twitter Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2 Title Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2 Author Ghasemi, Foad (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia); University of Kurdistan, Sanandaj) Frisenda, Riccardo (Instituto de Ciencia de Materiales de Madrid (ICMM)) Flores, Eduardo (Campus de Cantoblanco) Papadopoulos, N. (TU Delft QRD/Goswami Lab; Kavli institute of nanoscience Delft) Biele, Robert (University of the Basque Country; Technische Universität Dresden) de Lara, David Perez (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia)) van der Zant, H.S.J. (TU Delft QN/van der Zant Lab; Kavli institute of nanoscience Delft) Watanabe, Kenji (National Institute for Materials Science) Castellanos-Gomez, Andres (Instituto de Ciencia de Materiales de Madrid (ICMM)) Date 2020 Abstract In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur. Subject 2D materialsDFT GWOxidationPhotodetectorsRaman spectroscopyTiOTiS To reference this document use: http://resolver.tudelft.nl/uuid:345be15d-4d9d-4e85-bcca-cfd3d40a7932 DOI https://doi.org/10.3390/nano10040711 ISSN 2079-4991 Source Nanomaterials, 10 (4) Part of collection Institutional Repository Document type journal article Rights © 2020 Foad Ghasemi, Riccardo Frisenda, Eduardo Flores, N. Papadopoulos, Robert Biele, David Perez de Lara, H.S.J. van der Zant, Kenji Watanabe, Andres Castellanos-Gomez, More Authors Files PDF nanomaterials_10_00711.pdf 2.28 MB Close viewer /islandora/object/uuid:345be15d-4d9d-4e85-bcca-cfd3d40a7932/datastream/OBJ/view