Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

Journal article (2016)

Authors

S. Thomas EKL-Users - EEMCS
A. Jovic Electronic Components, Technology and Materials - EEMCS
B. Morana EKL-Users - EEMCS
F. Buja Micro and Nano Engineering - Mechanical, Maritime and Materials Engineering
A. Gkouzou Micro and Nano Engineering - Mechanical, Maritime and Materials Engineering
G. Pandraud EKL Processing - EEMCS
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2016 S. Thomas, A. Jovic, B. Morana, F. Buja, A. Gkouzou, G. Pandraud, Pasqualina M Sarro
DOI: https://doi.org/10.1016/j.proeng.2016.11.379
More Info
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Published Date

2016

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.