SiGe growth on patterned Si(001) substrates

Surface evolution and evidence of modified island coarsening

Journal article (2007)
Department
Microelectronics & Computer Engineering (EEMCS) (TU Delft)
Copyright: © 2007 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.2802555
Semiconductor quantum dots Semiconductor growth Surface morphology Semiconductor materials Ge-Si alloys Island structure
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Published Date

24-10-2007

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Source:

Applied Physics Letters, 91 (17), 2007

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v91/i17/p173115/s1

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics & Computer Engineering

Abstract

The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

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