Print Email Facebook Twitter Surround-gated vertical nanowire quantum dots Title Surround-gated vertical nanowire quantum dots Author Van Weert, M.H.M. Den Heijer, M. Van Kouwen, M.P. Algra, R.E. Bakkers, E.P.A.M. Kouwenhoven, L.P. Zwiller, V. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2010-06-11 Abstract We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis, and identify the neutral and singly charged exciton. These results are important for spin addressability in a charge tunable nanowire quantum dot. Subject arsenic compoundsexcitonsIII-V semiconductorsindium compoundsnanowiresphotoluminescencesemiconductor quantum dotssemiconductor quantum wires To reference this document use: http://resolver.tudelft.nl/uuid:ad3102ec-79f5-4a4e-ba31-a80da345ad32 DOI https://doi.org/10.1063/1.3452346 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v96/i23/p233112/s1 Source Applied Physics Letters, 96 (23), 2010 Part of collection Institutional Repository Document type journal article Rights (c) 2010 The Author(s); American Institute of Physics Files PDF vanWeert_2010.pdf 194.42 KB Close viewer /islandora/object/uuid:ad3102ec-79f5-4a4e-ba31-a80da345ad32/datastream/OBJ/view