Print Email Facebook Twitter Electrostatic control of the anomalous Hall effect in SrRuO3 Title Electrostatic control of the anomalous Hall effect in SrRuO3 Author Spring, Hélène (TU Delft Applied Sciences) Contributor Caviglia, Andrea (mentor) Akhmerov, Anton (graduation committee) van der Sar, Toeno (graduation committee) Degree granting institution Delft University of Technology Programme Applied Physics | Quantum Technology Date 2019-05-23 Abstract In this study, ultrathin films of the itinerant 4d ferromagnet SrRuO3 were epitaxially deposited on SrTiO3 and capped with a thin LaAlO3 layer. Top gates and a dielectric layer were patterned onto contacted films and magnetotransport properties were characterized at low temperatures as a function of top gate voltage. A particular focus was placed on the anomalous Hall resistivity. The magnitude of the Hall signal and the sheet resistance were shown to vary with top gate voltage. In particular, the anomalous Hall loops were compared to numerical tight-binding models. The model is proposed as an alternate explanation to the skyrmion picture and as a complement to the two-channel phenomenological model put forth to explain the unusual low-temperature anomalous signal of ultrathin SrRuO3 . Model predictions were found to be valid atlow temperatures in semiconducting Ru-deficient SrRuO3 films. Subject anomalous Hall effectcomplex oxidetop gatetight-binding model To reference this document use: http://resolver.tudelft.nl/uuid:bb30d5ee-c669-46f5-b3dd-be5c9e429484 Part of collection Student theses Document type master thesis Rights © 2019 Hélène Spring Files PDF final_corrected.pdf 39.34 MB Close viewer /islandora/object/uuid:bb30d5ee-c669-46f5-b3dd-be5c9e429484/datastream/OBJ/view