Print Email Facebook Twitter Ternary logic implemented on a single dopant atom field effect silicon transistor Title Ternary logic implemented on a single dopant atom field effect silicon transistor Author Klein, M. Mol, J.A. Verduijn, J. Lansbergen, G.P. Rogge, S. Levine, R.D. Remacle, F. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2010-01-26 Abstract We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row. Subject MOSFETternary logic To reference this document use: http://resolver.tudelft.nl/uuid:d4b6d16d-5113-48f0-bae2-b8cab99e43d9 DOI https://doi.org/10.1063/1.3297906 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v96/i4/p043107/s1 Source Applied Physics Letters, 96 (4), 2010 Part of collection Institutional Repository Document type journal article Rights (c) 2010 The Author(s); American Institute of Physics Files PDF Mol_2010.pdf 189.58 KB Close viewer /islandora/object/uuid:d4b6d16d-5113-48f0-bae2-b8cab99e43d9/datastream/OBJ/view