Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition

The role of stoichiometry

Journal article (2013)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: © 2013 American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.4798828
Transmission electron microscopy Sputter deposition Strontium compounds X-ray chemical analysis Pulsed laser deposition Lanthanum compounds
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Published Date

26-03-2013

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Source:

Applied Physics Letters, 102 (12), 2013

ISSN:

0003-6951

ISBN:

0003-6951

Source:

d7ce8ba8-e4cc-4346-be94-431cd24a8523

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.

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